System for Processing Semiconductor Substrate by Using Laser and Method of the Same

ABSTRACT

The present invention provides a system for processing a semiconductor substrate using a laser beam, the system including: a storing unit storing a process control data set for a slot for loading the semiconductor substrate therein; a process controlling unit detecting identification information of the slot in which the semiconductor substrate is loaded, and reading the control data, which is set for the detected identification information, from the storing unit to control a process of the semiconductor substrate; and a substrate processing unit processing the semiconductor substrate on the basis of the read control data using the laser beam with a predetermined energy.

TECHNICAL FIELD

The present invention relates to a system and method for processing asemiconductor substrate using a laser, by which a variety ofsemiconductor substrates can be processed using only one piece ofequipment.

BACKGROUND ART

A semiconductor substrate is manufactured using processes such asoxidation, exposure, development, etching, ion-implantation,planarization, deposition, metallization and the like. Further, each ofthese processes includes operations of stripping, polishing, cleaning,annealing, and the like. Besides these processes, another process isperformed depending on the kind of a device formed in the semiconductorsubstrate and the material constituting the semiconductor substrate.Alternatively, the characteristic of laser, the scanning speed, and thekind of a gas injected into a chamber are different depending on each ofthe processes, the type of the device, and the substrate characteristic.

Due to the complicated processes of manufacturing the semiconductorsubstrate, a conventional semiconductor-manufacturing device processesthe semiconductor substrate using only a predetermined process.Accordingly, the conventional semiconductor-manufacturing device shouldbe reset when a new process has to be performed or when a semiconductorsubstrate with a different characteristic from a previously processedsemiconductor substrate has to be processed. This results in a workcomplexity, and a process delay depending on the time taken for thereset.

DISCLOSURE OF THE INVENTION

The present invention provides a system and method for processing asemiconductor substrate using a laser by which a variety ofsemiconductor substrates with different characteristics can be processedusing one apparatus to execute various manufacturing processes withoutthe need for a separate manipulation.

According to an aspect of the present invention, there is provided asystem for processing a semiconductor substrate using a laser beam, thesystem including: a storing unit storing a process control data set fora slot for loading the semiconductor substrate therein; a processcontrolling unit detecting identification information of the slot inwhich the semiconductor substrate is loaded, and reading the controldata, which is set for the detected identification information, from thestoring unit to control a process of the semiconductor substrate; and asubstrate processing unit processing the semiconductor substrate on thebasis of the read control data using the laser beam with a predeterminedenergy.

The process controlling unit may include: a detecting unit detecting theidentification information assigned to the slot; and a controlling unitcontrolling the process of the semiconductor substrate by reading thecontrol data from the storing unit.

The process controlling unit may further include a user interfacing unitreceiving the identification information for the slot from a user.

The detecting unit may be provided at an aligner aligning thesemiconductor substrates respectively loaded in the slots.

According to another aspect of the present invention, there is provideda system for processing a semiconductor substrate using a laser beam,the system including: a first storing unit storing a process controldata set for the semiconductor substrate; a second storing unit storingimage data of each of processes of the semiconductor substrate; aphotographing unit photographing the semiconductor substrate to output aphotographed image of the semiconductor substrate; a process controllingunit comparing the outputted photographed image and the stored imagedata to decide the process of the semiconductor substrate, and readingthe control data corresponding to the decided process from the firststoring unit to control the process of the semiconductor substrate; anda substrate processing unit processing the semiconductor substrate onthe basis of the read control data using the laser beam with apredetermined energy.

The process controlling unit may include: a deciding unit comparing apattern formed on the semiconductor substrate and a pattern of thestored image data on the basis of the photographed image to decide theprocess of the semiconductor substrate; and a controlling unit readingthe control data corresponding to the decided process from the firststoring unit, and controlling the process of the semiconductor substrateon the basis of the read control data.

The process controlling unit may further include a user interfacing unitreceiving the stored control data or the stored image data from a user.

The photographing unit may be provided at an aligner aligning thesemiconductor substrates loaded in a plurality of slots provided in acassette.

The photographing unit may include a photoelectric conversion unitconverting a light emitted from the semiconductor substrate into apredetermined electrical signal.

The control data may have at least one of a control parameter, ascanning speed, a repetition rate, an attenuation angle of the laserbeam, a kind of a reactive gas, and an injection speed of the reactivegas, which correspond to the process of the semiconductor substrate.

The process of the semiconductor substrate may include a first processincluding at least one of etching, ion-implantation, planarization anddeposition, and a second process including at least one of stripping,polishing, cleaning, and annealing corresponding to the first process.

The device may be at least one of a memory device, a nonmemory device, aRF (Radio Frequency) device, and a displaying device.

The substrate processing unit may include: a laser generating unitgenerating the laser beam; an optical unit transmitting the laser beamto the semiconductor substrate; a chuck loading the semiconductorsubstrate thereon; and a transferring unit transferring thesemiconductor substrate from the cassette in which the semiconductorsubstrate is loaded, to the chuck.

The substrate processing unit may further include: a vacuum chamberproviding a vacuum atmosphere or a gas atmosphere to process thesemiconductor substrates loaded therein; a gas box storing a reactivegas or a purge gas, which is introduced into the vacuum chamber toprovide the gas atmosphere; and a pumping system having a pumping linefor exhausting an internal gas from the vacuum chamber.

The substrate processing unit may further include a stage driven by adriving motor, to allow the laser beam to be irradiated on an entiresurface of the semiconductor substrate.

The substrate processing unit may further include the stage supporting achuck, whereby the chuck supported by the stage is driven to allow thelaser beam to be irradiated on the entire surface of the semiconductorsubstrate.

The optical unit may include: an attenuator controlling an amount of anenergy of the laser beam outputted from the laser generating unit; ahomogenizer regularizing an energy distribution of the laser beam; alens array having a field lens and a doublet lens controlling theirradiated laser beam to have a regular beam profile; and a mirrorchanging a path of the laser beam to be irradiated on the semiconductorsubstrate.

The transferring unit may include: the cassette having the plurality ofslots in which the semiconductor substrate are loaded; an aligneraligning the semiconductor substrate loaded in the slots of thecassette; a cooling stage cooling the heated semiconductor substrate;and a transferring robot transferring the loaded semiconductor substratefrom the slots to the chuck of the chuck chamber.

The photographing unit may be provided at the transferring unit.

The laser generating unit may generate the laser beam having energylarger than energy necessary for removing particles from thesemiconductor substrate.

According to a further another aspect of the present invention, there isprovided a method for processing a semiconductor substrate using a laserbeam, the method including: setting a process control data for a slot inwhich the semiconductor substrate is loaded; detecting identificationinformation of the slot, and controlling a process of the semiconductorsubstrate on the basis of the set control data; and processing thesemiconductor substrate on the basis of the control data using the laserbeam with a predetermined energy.

The controlling of the process may include: detecting the identificationinformation assigned to the slot; and controlling the process of thesemiconductor substrate on the basis of the control data.

The detecting may be performed using an aligner aligning thesemiconductor substrates respectively loaded in the slots.

According to a still another aspect of the present invention, there isprovided a method for processing a semiconductor substrate using a laserbeam, the method including: setting a process control data set for thesemiconductor substrate; storing image data of each process of thesemiconductor substrate; photographing the semiconductor substrate tooutput a photographed image; comparing the outputted photographed imageand the stored image data to decide the process of the semiconductorsubstrate; controlling the process of the semiconductor substrate on thebasis of the control data corresponding to the decided process; andprocessing the semiconductor substrate on the basis of the control datausing the laser beam with a predetermined energy.

In the deciding of the process, a pattern formed on the semiconductorsubstrate may be compared with a pattern of the stored image data on thebasis of the photographed image to decide the process of thesemiconductor substrate.

The photographing may be performed using the photographing unit of thealigner aligning the semiconductor substrates, which are loaded in aplurality of slots provided in the cassette, or using the transferringunit transferring the semiconductor substrate.

The photographing may further include converting a light, which isemitted from the semiconductor substrate, into a predeterminedelectrical signal.

The control data may have at least one of a control parameter, ascanning speed, a repetition rate, an attenuation angle of the laserbeam, a kind of a reactive gas, and an injection speed of the reactivegas, which correspond to the process of the semiconductor substrate.

The processing of the semiconductor substrate may include a firstprocess including at least one of etching, ion-implantation,planarization, and deposition, and a second process including at leastone of stripping, polishing, cleaning, and annealing, which correspondto the first process.

The control data may have at least one of the control parameter, thescanning speed, the repetition rate, the attenuation angle of the laserbeam, the kind of the reactive gas, and the injection speed of thereactive gas, which correspond to a kind of a device formed in thesemiconductor substrate or a kind of material constituting thesemiconductor substrate.

The device may be at least one of a memory device, a nonmemory device, aRF (Radio Frequency) device and a displaying device.

The processing of the semiconductor substrate may include: transferringthe semiconductor substrate from the cassette in which the semiconductorsubstrate is loaded to a heating chuck; and transmitting the generatedlaser beam from the laser generator to the semiconductor substrate.

The processing of the semiconductor substrate may further includepreparing a vacuum atmosphere or a gas atmosphere to allow the loadedsemiconductor substrates to be processed in the vacuum chamber.

The processing of the semiconductor substrate may further includedriving the vacuum chamber into which the semiconductor substrate isintroduced, to allow the laser beam to be irradiated on an entiresurface of the semiconductor substrate.

The processing of the semiconductor substrate may further includedriving the chuck on which the semiconductor substrate is loaded, toallow the laser beam to be irradiated on the entire surface of thesemiconductor substrate.

The generated laser beam may have a larger energy than an energynecessary for removing particles from the semiconductor substrate.

Accordingly, various processes for manufacturing semiconductorsubstrates having different characteristics can be performed within oneapparatus without a separate operation.

The present invention provides a contactless communication tag thatprevents the reuse of or the fraudulent use of a genuine product tag ina counterfeit product without physically destroying the genuine producttag, is attached to a branded product, encrypts information of thebranded product, and provides the encrypted information.

The present invention also provides a portable tag reader that is handyto carry and determines the genuineness of a product by decryptinginformation received from a contactless communication tag and outputtingthe decrypted information.

The present invention also provides a method of providing genuinenessinformation of a product, in which information about the genuineness ofthe product is provided to a user by decrypting information stored in atag and outputting the decrypted information.

According to one aspect of the present invention, there is provided acontactless communication tag that is attached to a product and providesproduct information. The contactless communication tag includes acontactless communication unit, which wirelessly exchanges data with atag reader, creates a power source from a power signal received from thetag reader, and supplies the power source, a storing unit in which theproduct information and encryption key related information are stored,and an encryption unit, which encrypts the product information to betransmitted to the tag reader based on the encryption key relatedinformation.

According to another aspect of the present invention, there is provideda contactless communication tag that is attached to a product andprovides product information. The contactless communication tag includesa contactless communication unit, which wirelessly exchanges data with atag reader, creates a power source from a power signal received from thetag reader, and supplies the power source, a storing unit in which theproduct information, encryption key related information, and the numberof times the product information is read by the tag reader, anencryption unit, which encrypts the product information to betransmitted to the tag reader based on the encryption key relatedinformation, and an information providing unit, which reads the productinformation stored in the storing unit in response to a productinformation request message received from the tag reader, provides theread product information to the encryption unit, and rejects provisionof the product information if the number of times the productinformation is read exceeds a predetermined reference value.

According to still another aspect of the present invention, there isprovided a portable tag reader that reads information received from acontactless communication tag. The portable tag reader includes awireless communication unit, which wirelessly exchange data with thecontactless communication tag and wirelessly sends a power required forthe contactless communication tag, a storing unit in which at least oneencryption key related information is stored, a decryption unit, whichdecrypts data received from the contactless communication tag based onencryption key related information that is selected from the encryptionkey related information by encryption key specifying informationreceived from the contactless communication tag, an information readingunit, which requests product information to the contactlesscommunication tag attached to a product and reads the productinformation received from the contactless communication tag, and anoutput unit, which outputs the read product information.

According to still another aspect of the present invention, there isprovided a method of providing product information using a tag readerthat communicates with a contactless communication tag attached to aproduct. The method involves receiving encryption key specifyinginformation from the contactless communication tag, selecting encryptionkey related information corresponding to the received encryption keyspecifying information from encryption key related information stored ina storing means included in the tag reader, transmitting an informationrequest message that requests the product information to the contactlesscommunication tag, reading the product information received from thecontactless communication tag based on the selected encryption keyrelated information, and outputting a result of reading concerning theproduct information.

According to still another aspect of the present invention, there isprovided a product to which a contactless communication tag is attached.The contactless communication tag in which product information isstored, wherein the contactless communication tag includes a contactlesscommunication unit, which wirelessly exchanges data with a tag reader,creates a power source from a power signal received from the tag reader,and supplies the created power source, a storing unit in which productinformation including genuineness information of the product andencryption key related information are stored, an encryption unit, whichencrypts a signal to be transmitted to the tag reader, and aninformation providing unit, which reads the product information storedin the storing unit in response to a product information request messagereceived from the tag reader and provides the read product informationto the encryption unit, wherein visible information corresponding togenuineness information of the product stored in the contactlesscommunication tag is printed on or attached to the product.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a construction of a system forprocessing a semiconductor substrate using a laser, according to anembodiment of the present invention;

FIG. 2 is a view illustrating a DataBase (DB) structure of control datastored in a storing device, according to an embodiment of the presentinvention;

FIG. 3 is a view illustrating a construction of a process controllingdevice according to an embodiment of the present invention;

FIG. 4 is a view illustrating a detailed construction of a substrateprocessing device according to an embodiment of the present invention;

FIG. 5 is a block diagram illustrating a detailed construction of asubstrate processing device according to another embodiment of thepresent invention;

FIG. 6 is a block diagram illustrating a detailed construction of aprocess controlling device according to another embodiment of thepresent invention;

FIG. 7 is a flowchart illustrating a method for processing asemiconductor substrate by using a laser, according to an embodiment ofthe present invention; and

FIG. 8 is a flowchart illustrating a method for processing asemiconductor substrate by using a laser, according to anotherembodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The present invention will now be described more fully with reference tothe accompanying drawings, in which exemplary embodiments of theinvention are shown.

FIG. 1 is a block diagram illustrating a construction of a system forprocessing a semiconductor substrate by using a laser, according to anembodiment of the present invention.

Referring to FIG. 1, the system includes a storing device 110, a processcontrolling device 120, and a substrate processing device 130.

The storing device 110 stores a process control data set for a slot forloading the semiconductor substrate therein to allow the processing ofthe semiconductor substrate. The storing device 110 can be provided inthe process controlling device 120. The process of the semiconductorsubstrate includes upper processes of etching, ion-implantation,planarization, deposition and the like. Each of the upper processesincludes lower processes of stripping, polishing, cleaning, annealing,and the like. The control data is stored in the storing device 110 todetermine a control parameter, a scanning speed, a repetition rate, anattenuation angle of a laser beam, a kind of a reactive gas, aninjection speed of the reactive gas and the like, which are employed ineach of the upper processes and the lower processes.

Alternatively, the storing device 110 can store the control data fordetermining the control parameter, the scanning speed, the repetitionrate, the attenuation angle of the laser beam, the kind of the reactivegas, the injection speed of the reactive gas and the like, which dependon a kind of a device formed through each of the upper processes and thelower processes in the semiconductor substrate and a kind of a materialconstituting the semiconductor substrate. At this time, the deviceformed in the semiconductor substrate can be a memory device, anon-memory device, a Radio Frequency (RF) device, a display device andthe like. The material constituting the semiconductor substrate can bealuminum (Al), silicon oxide (SiO₂), silicon (Si), and the like. FIG. 2illustrates a DataBase (DB) structure of the control data stored in thestoring device 110.

The process controlling device 120 detects identification information ofthe slot, and reads from the storing device 110 the control data, whichis set for the detected identification information, to control theprocess of the semiconductor substrate. FIG. 3 illustrates aconstruction of the process controlling device 120 according to anembodiment of the present invention.

Referring to FIG. 3, the process controlling device 120 includes adetecting unit 122, a controlling unit 124, and a user interfacing unit126. The detecting unit 122 detects the identification informationassigned to the slot for loading the semiconductor substrate therein.The semiconductor substrate is loaded and transferred to the slotprovided in a cassette. Proper identification information is assigned toeach of the slots. The detecting unit 122 is provided at a transferringdevice for transferring the semiconductor substrate or an aligner foraligning the semiconductor substrate loaded in the slot. The detectingunit 122 transmits the detected identification information to thecontrolling unit 124 before the semiconductor substrate is detached fromthe slot and processed.

The controlling unit 124 reads the control data set for the detectedidentification information from the storing device 110, to control theprocess of the semiconductor substrate. A control signal outputted fromthe controlling unit 124 is inputted to the substrate processing device130.

The user interfacing unit 126 receives the stored control data orreceives the process corresponding to each of the slots from a user. Thecontrolling unit 124 stores the received control data or the processcorresponding to each of the slots in the storing device 110.

In more detail, in an operation of the process controlling device 120,the process controlling device 120 transmits a process commencingcommand for a specific slot to the substrate processing device 130 tocontrol the process. For example, when a Dynamic Random Access Memory(DRAM) is formed using a semiconductor substrate loaded in a first slotof the cassette, the semiconductor substrate is formed of aluminum (Al),and the process is stripping or etching, the following procedure isperformed. If the detecting unit 122 detects the identificationinformation of the first slot, the controlling unit 124 controls thesubstrate processing unit 130 on the basis of the control data set forthe first slot to process the semiconductor substrate loaded in thefirst slot. Next, if the detecting unit 122 detects identificationinformation of a second slot, the controlling unit 124 controls thesubstrate processing unit 130 to process the semiconductor substrateloaded in the second slot in the same manner. For example, a DRAM can beformed using a semiconductor substrate loaded in a second slot of thecassette, the process can be stripping or etching, and the correspondingsemiconductor substrate can be formed of silicon (Si).

The substrate processing device 130 processes the semiconductorsubstrate on the basis of the read control data using the laser beamwith an energy corresponding to each of the processes. A detailedconstruction of the substrate processing device 130 is illustrated inFIG. 4.

Referring to FIG. 4, the substrate processing device 130 includes alaser generator 410, an optical unit 420, a vacuum chamber 430, a gasbox 440, a stage 460, a pumping system 470, and a transferring unit 480.

The laser generator 410 generates the laser beam with the energycorresponding to the control parameter of the laser beam inputted fromthe process controlling device 120. The energy and the pulse repetitionrate of the laser beam emitted from the laser generator 410 arecontrolled by the control signal outputted from the process controllingdevice 120. Accordingly, a pulse number of the laser beam irradiated ata specific area of the semiconductor substrate 140 is accuratelycontrolled, together with a movement speed of the stage controlled bythe control signal outputted from the process controlling device 120.The generated laser beam has a Gaussian profile. The laser beam has anirregular effect on each area of the semiconductor substrate 140 whenthe semiconductor substrate 140 is processed. A homogenizer of theoptical unit 420 allows the laser beam irradiated on the semiconductorsubstrate 140 to have a temporarily and spatially regular energydistribution at a specific area of the semiconductor substrate 140. Inthe above description, the laser generator 410 employs a device forgenerating a pulse laser beam as an example, but can employ a device foremitting a continuous wave laser beam. The laser beam can include alllasers with photon energy.

The optical unit 420 changes a path of the laser beam, or splits thelaser beam, or controls an intensity of the laser beam to irradiate thegenerated laser beam on the semiconductor substrate 140 seated on achuck 450 in the vacuum chamber 430.

The optical unit 420 includes an attenuator 422, the homogenizer (notshown), a beam splitter (not shown), a field lens and a doublet lens(not shown), a mirror 424, an energy detector (not shown), a beamprofiler (not shown), and the like. The optical unit 420 selectivelyincludes a variety of lenses (not shown). The attenuator 422 controls anamount of the energy of the laser beam emitted from the laser generator410. The homogenizer regularizes the energy distribution of the laserbeam. The homogenizer is installed at a front end of the beam splitter,but can be selectively installed at a rear end of the beam splitter. Thebeam splitter is selectively provided to split the laser beam such thatthe laser beam can be irradiated over the chuck 450. The field lens andthe doublet lens control the irradiated laser beam to provide a regularbeam profile. The mirror 424 changes the path of the laser beam. Theenergy detector measures the energy of the laser beam irradiated on theprocess-targeted semiconductor substrate to calculate an energy densityof the laser beam. The change of the path and the split and theintensity control of the laser beam, which are accomplished by using theoptical unit 420, are controlled by the control parameter inputted fromthe process controlling device 120.

The vacuum chamber 430 is a place in which the semiconductor substrate140 is processed. The semiconductor substrate 140 is loaded in thevacuum chamber 430 by the transferring unit 480. The vacuum chamber 430includes a slit door 432, a quartz window 434, the chuck 450, a support436, the stage 460, a quartz focus ring (not shown), a pin up and downsystem (not shown), a Baratron gauge (not shown), and a nozzle (notshown). The slit door 432 opens and closes a path for allowing the entryor advance of the process-targeted semiconductor substrate. The quartzwindow 434 is manufactured using a quartz having a high transmittance,and allows the laser beam to be irradiated on the process-targetedsemiconductor substrate. For convenience of inner washing or management,an upper structure is separated from the vacuum chamber 430 in which thequartz window 434 is disposed.

The stage 460 of the vacuum chamber 430 is differently positioneddepending on a scanning way. In a chamber scanning way, a quartz plateand an orifice are provided. The quartz plate functions as a protectivewall when the laser beam, which might be irradiated outside of the chuck450, is irradiated under the chuck 450. The orifice functions toregularly pump the vacuum chamber 430. Unlike the chamber scanning way,a chuck scanning way employs an exhaust tube to more effectively exhaustparticles caused when the laser beam is irradiated.

In the chamber scanning way, the stage 460 is installed outside of thevacuum chamber 430 to allow the movement of the whole of the vacuumchamber 430, thereby irradiating the laser beam on the whole of thesemiconductor substrate 140. In the chuck scanning way, the stage 460 isdisposed in the vacuum chamber 430 to drive the chuck 450 disposed overthe stage 460. In the chamber scanning way, there is a feature in thatthe quartz window 434 on which the laser beam is incident has a sizecorresponding to a size of the chuck 450 for fixing the semiconductorsubstrate 140, and the stage 460 for allowing the scanning is disposedunder the vacuum chamber 430.

Meanwhile, in the chuck scanning way, the quartz window 434 has a largersize than the laser beam. In the chuck scanning way, the stage 460 isdisposed within the vacuum chamber 430. Therefore, the vacuum chamber430 has a larger size than in the chamber scanning way. Additionally, inorder to prevent the generation of a particle source caused by the stage460 of the vacuum chamber 430, a motor is provided outside of the vacuumchamber 430, and a linear motion guide exposed in the vacuum chamber 430is shielded using bellows.

The gas box 440 supplies the reactive gas and a purge gas to improve anefficiency of the process of the semiconductor substrate 140. The gasbox 440 includes: a Mass Flow Controller (MFC) for controlling a flow ofgas introduced into the vacuum chamber 430; an air valve for initiatingor blocking a gas introduction into the vacuum chamber 430; a solenoidvalve for driving the air valve; a three-way valve for purging a toxicgas; a check valve for preventing a backflow; a filter for preventingthe introduction of the particle; a manual valve for manuallycontrolling the opening and closing of the gas; a regulator forregulating a pressure of the gas; and other gas pipes.

The chuck 450 is supported by the stage 460, and the semiconductorsubstrate 140 is positioned on the chuck 450. The chuck 450 is connectedto the stage 460 through a support member 436. The chuck 450 canadditionally include a heating unit for heating the semiconductorsubstrate 140. The stage 460 rotates the semiconductor substrate 140 toallow multi scanning. The stage 460 is disposed within the vacuumchamber 430, and is a module for irradiating the laser beam on the wholesurface of the process-targeted semiconductor substrate 140. The laserbeam has a size smaller than a diameter of the semiconductor substratein a width direction, or in both width and length directions.Accordingly, the stage 460 positioned within the vacuum chamber 430 ismoved to allow the laser beam to be irradiated on the whole surface ofthe semiconductor substrate 140 positioned over the stage 460. The stage460 can be scaled along the X-axis or Y-axis, or can be additionallyscaled along the Z-axis if necessary. Further, the stage 460 can bescaled simultaneously along the X and Y-axes. The stage 460 is drivenusing the motor (not shown).

A quartz focus ring allows the semiconductor substrate 140 to beaccurately held, and prevents the laser beam from being irradiated on aheating chuck portion other than the semiconductor substrate. The pin upand down system lifts wafer to allow a robot to easily catch thesemiconductor substrate 140 placed on the heating chuck. The Baratrongauge measures a vacuum degree of the vacuum chamber 430. The nozzleinitiates or blocks the introduction of the reactive gas and the purgegas. An exhaust port is connected to a pumping system 470 to form avacuum state in the vacuum chamber 430 or to exhaust particles from thevacuum chamber 430. The nozzle introduces the gas into the vacuumchamber 430. The nozzle is desirably installed adjacently to theprocess-targeted semiconductor substrate 140 to allow the purge gas orthe reactive gas to maintain a regular distribution in an area at whichthe laser beam is irradiated. Further, if an inert gas is introduced asthe purge gas into the vacuum chamber 430 during the processing of thesemiconductor substrate 140, the generated particles can be preventedfrom adhering to the quartz window 434 and the particles can be removed.

The pumping system 470 includes a pumping line 472 acting as a path forexhausting the air from the vacuum chamber 430. The pumping system 470includes: the exhaust port of the vacuum chamber 430; a check valve forpreventing compression; a butterfly valve (throttle valve) forcontrolling an amount of pumped air; and a gate valve. The gate valveincludes a soft valve for allowing a slow pumping; and a roughing valvefor allowing a fast pumping. The pumping line 472 is connected to avacuum pump and the like to form a vacuum in the vacuum chamber 430.

The transferring unit 480 transfers the semiconductor substrate 140 onthe chuck 450. That is, the transferring unit 480 supplies thesemiconductor substrate 140 loaded in a built-in cassette inside of thevacuum chamber 430, and draws the processed semiconductor substrate 140outside of the vacuum chamber 430. The transferring unit 480 includes: acassette stage on which the cassette is put; an aligner for aligning thesemiconductor substrate 140; a cooling stage for cooling thesemiconductor substrate 140 heated during the process; the robot fortransferring the semiconductor substrate 140; and a Fan Filter Unit(FFU) for filtering of particles such as atmosphere dusts. Thetransferring unit 480 includes a detecting unit 124 for photographingthe semiconductor substrate 140 loaded in the cassette to providephotographed image to the controlling unit 122. The detecting unit 124is desirably disposed at the aligner, but can be disposed in a positionof allowing the semiconductor substrate 140 to be photographed in thetransferring unit 480.

Each of the structural elements of the substrate processing device 130is controlled by the control signal inputted from the processcontrolling device 120. The process controlling device 120 reads thecontrol data, which corresponds to the identification information of theslot, from the storing device 110, and provides the control signalcorresponding to the read control data to each of the structuralelements of the substrate processing device 130.

Alternatively, unlike the description of FIG. 4, the substrateprocessing device 130 can have a structure where the chamber is notprovided. In this case, the structural elements such as the vacuumchamber 430, the gas box 440, the pumping system 470 and the like forpreparing a vacuum atmosphere or a gas atmosphere are not installed.However, the laser generator 410, the optical unit 420, the chuck 450,the stage 460 and the transferring unit 480 should be necessarilyprovided to process the semiconductor substrate 140. Further, the nozzleshould be necessarily provided to inject the inert gas into the vacuumchamber 430, and a hood should be necessarily provided to exhaust theparticles and the inert gas from the vacuum chamber 430 after the lasertreatment.

FIG. 5 is a block diagram illustrating a detailed construction of asubstrate processing system using a laser, according to anotherembodiment of the present invention.

Referring to FIG. 5, the semiconductor substrate processing systemincludes a first storing device 510, a second storing device 520, aphotographing device 530, a process controlling device 540, and asubstrate processing device 550. Since the first storing device 510 andthe substrate processing device 550 have the same construction andfunction as the storing device 110 and the substrate processing device130 described with reference to FIG. 1, the detailed descriptionsthereof are omitted.

The second storing device 520 stores image data during each process ofthe semiconductor substrate 140. The image data are reference imagespreviously photographed corresponding to the device formed in thesemiconductor substrate 140, the material of the semiconductor substrate140, and the process performed for the semiconductor substrate 140.

The photographing device 530 is provided at the aligner for aligning thesemiconductor substrate 140 loaded in a plurality of slots of thecassette. The photographing device 530 is embodied using a photoelectricconversion device for converting light, which is emitted from thesemiconductor substrate 140, into an electrical signal. The photographedimage is inputted to the process controlling device 540.

FIG. 6 is a block diagram illustrating a detailed construction of theprocess controlling device 540 according to another embodiment of thepresent invention.

Referring to FIG. 6, the process controlling device 540 includes adeciding unit 542, a controlling unit 544, and a user interfacing unit546. The deciding unit 542 compares a pattern, which is recognized fromthe photographed image inputted from the photographing device 530, ofthe semiconductor substrate 140 with a pattern of the image data storedin the second storing device 520, to decide the process of thesemiconductor substrate 140.

The controlling unit 544 reads the control data, which corresponds tothe process decided for the semiconductor substrate 140, from the firststoring device 510, and controls the process of the semiconductorsubstrate 140 by the read control data. The control signal outputtedfrom the controlling unit 544 is inputted to the substrate processingdevice 550.

The user interfacing unit 546 receives the control data stored in thefirst storing device 510 or receives the image data stored in the secondstoring device 520 from the user. The controlling unit 544 stores thecontrol data or the image data received through the user interfacingunit 546 in the first storing device 510 or the second storing device520.

FIG. 7 is a flowchart illustrating a method for processing asemiconductor substrate by using a laser according to an embodiment ofthe present invention.

Referring to FIG. 7, the user inputs the set control data to the storingdevice 110 through the user interfacing unit 126 to process thesemiconductor substrate 140 (S700). The inputted control data is storedin the storing device 110 (S705). Next, the semiconductor substrate 140is loaded in the slot of the cassette. The proper identificationinformation is attached or printed at each of the slots in anelectrically or electronically recognizable format (for example, abarcode, an identification card and the like). Furthermore, visuallyrecognizable process information, information on the kind of the deviceformed in the semiconductor substrate and the kind of the materialconstituting the semiconductor substrate, and the like can be recordedin the slot correspondingly to the identification information of each ofthe slots.

The transferring unit 480 transfers the cassette in which thesemiconductor substrate 140 is loaded to the stage 460. If the cassetteis spaced apart from the stage 460 and reaches at a position ofdetecting the identification information, the detecting unit 122 of thealigner detects the identification information of the slot (S720). Theidentification information detected by the detecting unit 122 isinputted to the controlling unit 124. The controlling unit 124 reads thecontrol data, which is set for the detected identification information,from the storing device 110 (S725). After that, the controlling unit 124outputs the control signal corresponding to the read control data to thesubstrate processing device 130 (S730).

If the cassette is spaced apart from the stage 460 and reaches aposition when the substrate is detached, the transferring unit 480detaches the semiconductor substrate 140 from the slot to transfer thesemiconductor substrate 140 onto the chuck 450 (S735). The lasergenerator 410 generates the laser beam, which has the energy, the pulsenumber, the repetition rate, the pulse width and the like correspondingto the process of the transferred semiconductor substrate 140 (S740).The optical unit 420 performs a light split, a light path change, anattenuation angle setting and the like corresponding to the process ofthe transferred semiconductor substrate 140 to allow the generated laserbeam to be irradiated on the semiconductor substrate 140 (S745). Thechuck 450 or the stage 460 is driven at the scanning speed correspondingto the process of the transferred semiconductor substrate 140 (S750).The above procedure is repetitively performed for the semiconductorsubstrate 140 loaded in each of the slots.

FIG. 8 is a flowchart illustrating a method for processing asemiconductor substrate using a laser according to another embodiment ofthe present invention.

Referring to FIG. 8, through the user interfacing unit 126, the userinputs the control data for the process of the semiconductor substrate140 and the reference image previously photographed corresponding to thedevice formed in the semiconductor substrate 140, the material of thesemiconductor substrate 140, and the process of the semiconductorsubstrate 140 (S800). The inputted control data and reference image isrespectively stored in the first storing device 510 and the secondstoring device 520 (S805). Next, the semiconductor substrate 140 isloaded in the slot of the cassette (S810). After that, the photographingdevice 530 photographs the semiconductor substrate 140 loaded in each ofthe slots to provide the photographed image of the semiconductorsubstrate 140 to the process controlling device 540 (S815).

The deciding unit 542 recognizes the pattern of the semiconductorsubstrate 140 through the inputted photographed image (S820). Next, thedeciding unit 542 compares the recognized pattern with the pattern ofthe stored image data to decide the process of the semiconductorsubstrate 140. The controlling unit 544 reads the control data, whichcorresponds to the decided process of the semiconductor substrate 140,from the substrate processing device 550 (S830).

If the cassette is spaced apart from the stage 460 and reaches theposition the substrate is detached, the transferring unit 480 detachesthe semiconductor substrate 140 from the slot to transfer the detachedsemiconductor substrate 140 onto the chuck 450 (S835). The lasergenerator 410 generates the laser beam with the energy, the pulsenumber, the repetition rate, the pulse width and the like correspondingto the process of the transferred semiconductor substrate 140 (S480).The optical unit 420 performs the light split, the light path change,the setting of the attenuation angle and the like corresponding to theprocess of the transferred semiconductor substrate 140 to allow thegenerated laser beam to be irradiated on the semiconductor substrate 140(S845). The chuck 450 or the stage 460 is driven at the scanning speedcorresponding to the process of the transferred semiconductor substrate140 (S850). The above procedure is repetitively performed for thesemiconductor substrate 140 loaded in each of the slots.

Meanwhile, in case where the vacuum chamber 430, the gas box 440 and thepumping system 470 are provided in the substrate processing device 130,they are controlled by the control signal inputted from the controllingunit 124 to prepare the vacuum atmosphere or the gas atmosphere in thevacuum chamber 430.

Hereinafter, the system and method for processing a semiconductorsubstrate by using a laser according to the present invention is appliedto provide experimental results for the cleaning, stripping, polishingand annealing processes. The laser used in the experiment is a KrFexcimer laser having a laser pulse length of 23 ns. The experiment isperformed on the basis of the pulse number, the pulse repetition rate,the atmosphere and the like.

First, an experimental result of a procedure of removing particles froma photomask using the laser is provided.

The photomask is a pattern to be formed on a wafer. The pattern isformed of a Cr-based or MoSi-based material for the purpose of anexposure process to have the same shape on a transparent substrate of aquartz material. The particles are generated during the process offorming the pattern of the material deposited on the quartz substrate.The particles directly influence device reliability, and should benecessarily removed. The photomask for this experiment has a size of sixinches in length and width. Cr film and MoSiON film are patterned as theshield film. The particles are adhered to the shield film after thepattern is formed. The adhered particles are removed using the laser.KLA-Tencor equipment is used to measure a result of removal.

Table 1 shows an experimental result according to a variety of variablesof the laser. As shown in Table 1, when the Cr film is respectivelygiven three pulses and ten pulses at laser energy densities of 100mJ/cm² and 90 mJ/cm², the particles can be removed from the Cr filmwithout damage. Additionally, when the MoSiON film is respectively giventen pulses at laser energy densities of 100 mJ/cm², 120 mJ/cm² and 140mJ/cm², the particles can be removed from the MoSiON film withoutdamaging the film. TABLE 1 Energy density Number of Experiment ClassShield film (mJ/cm²) laser pulses result 1 Cr 100 5 Shield film damaged2 Cr 100 3 No damage, good removal 3 Cr 90 10 No damage, good removal 4Cr 80 15 Bad removal 5 MoSiON 100 10 No damage, good removal 6 MoSiON120 10 No damage, good removal 7 MoSiON 140 10 No damage, good removal 8MoSiON 150 10 Shield film damaged 9 MoSiON 150 30 Shield film damaged 10MoSiON 160 10 Shield film damaged

Next, an experiment result of a process of removing a photoresist and apolymer after the storage node is etched during a DRAM process using thelaser is provided.

During the DRAM process, after ruthenium (Ru) is etched, the photoresistand the polymer exist within a hole. Herein, the polymer is a metallicpolymer and is not easily removed, and has a great influence on a devicecharacteristic. A sample of the storage node used in this experiment hasa Critical Dimension (CD) of 0.25 μm and a depth of 0.5 μm.Additionally, the sample includes the photoresist and the polymer. Thelaser is used to concurrently remove the photoresist and the polymerfrom the sample. Secondary Electron Microscopy (SEM) equipment is usedto measure a result of removal. The measured result is shown in Table 2.Referring to Table 2, when three pulses are given at a laser energydensity of 130 mJ/cm², the photoresist and the polymer are concurrentlyremoved without damaging a ruthenium (Ru) film. TABLE 2 Energy Number ofExperiment result density laser Polymer Class (mJ/cm²) pulses Ru damagePR removal removal 1 90 3 No No removal No removal 2 90 5 No Removed Noremoval 3 130 3 No Removed Removed 4 130 5 Damaged Removed Removed 5 1402 No No removal No removal 6 140 3 Damaged Removed Removed 7 150 2Damaged Removed Removed 8 150 3 Damaged Removed Removed

Next, an experimental result of a process of polishing a LiTaO₃substrate using the laser is provided.

The LiTaO₃ substrate is used for the RF device and the like. After theetching process of manufacturing the device, the over-etching of theLiTaO₃ substrate causes a line-patterned fault and also damages asurface of the LiTaO₃ substrate in roughness. These cause a devicefailure. In this experiment, the LiTaO₃ substrate employs a wafer offour inches. The LiTaO₃ substrate has the line-patterned fault, and hasthe surface roughness of about 500 Å in Rp-v and about 50 Å in RMS. Thelaser is used to planarize the sample, and Atomic Force Microscopy (AFM)equipment is used to measure a result of planarization. The result isshown in Table 3. Referring to Table 3, when ten pulses, fifteen pulses,and twenty pulses are respectively given at a laser energy density of150 mJ/cm², a minute degree of planarization is improved. TABLE 3Experiment Energy density Number of result Class (mJ/cm²) laser pulsesRp-v(Å) RMS(Å) 1 150 10 199 3.12 2 150 15 28.2 1.75 3 150 20 12 1.49 4150 30 Substrate damaged 5 155 10 102 2.47 6 160 10 Substrate damaged

Next, an experimental result of a process of annealing GaN using thelaser is provided.

GaN is intensively studied for applications to Laser Diodes (LD) or blueLight Emitting Diodes (LED). GaN is deposited on the quartz (SiO₂) as apolycrystalline material. When photoluminescence (PL) is measured, thedeposited polycrystalline GaN is observed as not only having a Band-edgeEmission (BE) peak (about 3.4 eV) corresponding to a bandgap of the GaN,but also having a Quasi-level peak (replica) caused by exciton orphonon, and a variety of peaks caused by an impurity level and the like.Yellow emission (YL) peak (about 2.2 eV) resulted from a grain boundaryacts as a main cause of reducing an optical efficiency. Accordingly, inorder to improve a characteristic of the polycrystalline GaN, anunnecessary Quasi-level peak should be removed through the annealing,and the yellow emission peak should be removed through a grain growth.

In this experiment, the characteristic of the polycrystalline GaN isimproved by annealing using the laser. PL equipment is used to measure aresult of improvement. The experiment result is shown in Table 4.Referring to Table 4, when one hundred laser pulses and two hundredslaser pulses are irradiated at laser energy densities of 400 mJ/cm² and450 mJ/cm², the unnecessary peaks are removed. Even when one hundredlaser pulses are irradiated at a laser energy density of 500 mJ/cm², animprovement effect is also obtained. TABLE 4 Energy density Number ofExperiment Class (mJ/cm²) laser pulses result 1 350 50 No effect 2 350100 No effect 3 350 200 No effect 4 350 300 No effect 5 400 50 No effect6 400 100 Improved 7 400 200 Improved 8 400 300 GaN damaged 9 450 50 Noeffect 10 450 100 Improved 11 450 200 Improved 12 450 300 GaN damaged 13500 50 No effect 14 500 100 Improved 15 500 200 GaN damaged 16 600 50GaN damaged

In this experiment, different samples are respectively used for thedifferent process. Each of the samples is different in recipe. Thisexperiment result corresponds to one embodiment of the presentinvention. The recipe for each of the processes for a variety of devicescan employ the laser. The recipe is stored in a database and used tocontrol a manufacture process of the semiconductor substrate.Additionally, the semiconductor substrates in this experiment aredifferent in shape or size. According to the present invention, adatabase of the recipe can be not only constructed for the differentkind of the sample requiring the different process to easily process thesemiconductor substrate in one apparatus, but also the samples having adifferent size or shape can be processed using hardware and software.

Alternatively, the used laser beam of the present invention hasdesirably a line shape, but can have a different shape (for example,rectangular beam). At this time, the rectangular beam is much smallerthan the process-targeted semiconductor substrate. Therefore, thescanning is severally performed to process the whole wafer. Therectangular beam has an advantage in that since the laser beam is short,an optical system does not need a large-sized lens. Accordingly, eventhe quartz window 434 is small, and even the exhaust port adjacent tothe wafer is small.

In this case, since the scanning is severally performed to process thewhole of the process-targeted semiconductor substrate, the laser beamshould be accurately controlled at its lengthwise superposed andirradiated portion. Accordingly, in order to accurately control thesuperposed and irradiated portion of the laser beam, the stage needs tobe driven with a great degree of accuracy. Further, in case where such alaser beam is employed, the stage can be driven step by step, toirradiate the laser beam on the semiconductor substrate.

In this case, the size of the laser beam is controlled and the laserbeam is irradiated to a specific area of the semiconductor substratefrom which one or more chips can be made. At this time, theprocess-targeted semiconductor substrate is processed in such a mannerthat the laser beam is irradiated on the specific area of thesemiconductor substrate. After the semiconductor substrate is moved at apredetermined distance, the laser beam is irradiated on a next specificarea of the moved semiconductor substrate. As such, a good efficiency isobtained since the laser beam is efficiently not irradiated. Further,unlike the scanning way, the step by step motion superposes less thelaser beam in a width direction, not in a length direction. Besides, thelaser beam is superposed to prevent a problem at the time of thecompletion of the chip. Accordingly, a problem of the scanning way, thatis, superposition, is solved. However, in the step by step motion,information and mapping for the semiconductor substrate at which thechip is manufactured should be preceded. Furthermore, the accuratedriving of the stage is required.

The present invention relates to a system and method for processing asemiconductor substrate using a laser, but those skilled in the art canunderstand that other device than a semiconductor substrate can beprocessed within the scope and spirit of the present invention.

When the process is performed using a laser according to the presentinvention, the irradiated laser has an energy level not to damage thesemiconductor substrate, to remove particles. Alternatively, when theprocess is performed using the laser, the laser beam has an energy levelenough to change a physicochemical characteristic of the semiconductorsubstrate other than the removal-targeted substance. Accordingly, theremoval of the particles and the characteristic improvement of thesemiconductor substrate are concurrently accomplished. For example, thelaser beam having enough energy is used to concurrently performstripping and annealing after a planarization process. At this time, thelaser beam should have an energy level not to damage the semiconductorsubstrate, remove the particles, and improve the characteristic of thesemiconductor substrate.

Through this method, melting, annealing, and ablation of a semiconductorsubstrate are performed to improve a crystal structure, a density,conductivity, and the like. Further, by irradiating the laser beamhaving an energy level larger than the energy necessary for removing aparticle, the process-targeted substance can be removed. At the sametime, the number of the laser pulses can be reduced. The number of thelaser pulses has a close relation with the efficiency of removal.Furthermore, an unstable structure of the semiconductor substrate, whichis disposed under the process-targeted substance, can be stabilized. Atthe same time, the surface roughness using a method such as the meltingcan be improved, thereby providing two or more improvements through oneprocess.

According to the present invention, the semiconductor substrate isprocessed by the control data for the process decided on the basis ofthe slot or the image of the semiconductor substrate. Therefore, a newprocess, or a reset process of a semiconductor manufacturing device isnot required when the semiconductor substrate having a differentcharacteristic from a conventional semiconductor substrate is processed.Accordingly, the present invention can process the semiconductorsubstrate using a variety of characteristics and a variety of processesin one substrate processing system. Further, the exhaust port connectedwith one pumping system is disposed at each of the chucks disposedwithin the vacuum chamber, thereby preventing the particles fromcontaminating the quartz window.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. A system for processing a semiconductor substrate using a laser beam,the system comprising: a storing unit storing a process control data setfor a slot for loading the semiconductor substrate therein; a processcontrolling unit detecting identification information of the slot inwhich the semiconductor substrate is loaded, and reading the controldata, which is set for the detected identification information, from thestoring unit to control a process of the semiconductor substrate; and asubstrate processing unit processing the semiconductor substrate on thebasis of the read control data using the laser beam with a predeterminedenergy.
 2. The system of claim 1, wherein the process controlling unitcomprises: a detecting unit detecting the identification informationassigned to the slot; and a controlling unit controlling the process ofthe semiconductor substrate by reading the control data from the storingunit.
 3. The system of claim 1, wherein the process controlling unitfurther comprises a user interfacing unit receiving the identificationinformation of the slot from a user.
 4. The system of claim 2 or 3,wherein the detecting unit is provided at an aligner aligning thesemiconductor substrates respectively loaded in the slots.
 5. A systemfor processing a semiconductor substrate using a laser beam, the systemcomprising: a first storing unit storing a process control data set forthe semiconductor substrate; a second storing unit storing image data ofeach of processes of the semiconductor substrate; a photographing unitphotographing the semiconductor substrate to output a photographed imageof the semiconductor substrate; a process controlling unit comparing theoutputted photographed image and the stored image data to decide theprocess of the semiconductor substrate, and reading the control datacorresponding to the decided process from the first storing unit tocontrol the process of the semiconductor substrate; and a substrateprocessing unit processing the semiconductor substrate on the basis ofthe read control data using the laser beam with a predetermined energy.6. The system of claim 5, wherein the process controlling unitcomprises: a deciding unit comparing a pattern formed on thesemiconductor substrate and a pattern of the stored image data on thebasis of the photographed image to decide the process of thesemiconductor substrate; and a controlling unit reading the control datacorresponding to the decided process from the first storing unit, andcontrolling the process of the semiconductor substrate on the basis ofthe read control data.
 7. The system of claim 5, wherein the processcontrolling unit further comprises a user interfacing unit receiving thestored control data or receiving the stored image data from a user. 8.The system of claim 5, wherein the photographing unit is provided at analigner aligning the semiconductor substrates loaded in a plurality ofslots provided at a cassette.
 9. The system of claim 5, wherein thephotographing unit comprises a photoelectric conversion unit convertinga light emitted from the semiconductor substrate into a predeterminedelectrical signal.
 10. The system of claim 1 or 5, wherein the controldata has at least one of a control parameter, a scanning speed, arepetition rate, an attenuation angle of the laser beam, a kind of areactive gas, and an injection speed of the reactive gas, whichcorrespond to the process of the semiconductor substrate.
 11. The systemof claim 10, wherein the process of the semiconductor substratecomprises a first process including at least one of etching,ion-implantation, planarization, and deposition, and a second processincluding at least one of stripping, polishing, cleaning, and annealingcorresponding to the first process.
 12. The system of claim 1 or 5,wherein the control data has at least one of a control parameter, ascanning speed, a repetition rate, an attenuation angle of the laserbeam, a kind of a reactive gas, an injection speed of the reactive gas,which correspond to a kind of a device formed in the semiconductorsubstrate or a kind of material constituting the semiconductorsubstrate.
 13. The system of claim 12, wherein the device is at leastone of a memory device, a non-memory device, a RF (Radio Frequency)device, and a displaying device.
 14. The system of claim 1 or 5, whereinthe substrate processing unit comprises: a laser generating unitgenerating the laser beam; an optical unit transmitting the laser beamto the semiconductor substrate; a chuck holding the semiconductorsubstrate thereon; and a transferring unit transferring thesemiconductor substrate from the cassette in which the semiconductorsubstrate is loaded to the chuck.
 15. The system of claim 14, whereinthe substrate processing unit further comprises: a vacuum chamberproviding a vacuum atmosphere or a gas atmosphere to process thesemiconductor substrates loaded therein; a gas box storing a reactivegas or a purge gas, which is introduced into the vacuum chamber toprepare the gas atmosphere; and a pumping system having a pumping lineexhausting the reactive gas or the purge gas from the vacuum chamber.16. The system of claim 14, wherein the substrate processing unitfurther comprises a stage driven by a driving a motor, to allow thelaser beam to be irradiated on an entire surface of the semiconductorsubstrate.
 17. The system of claim 14, wherein the substrate processingunit further comprises the stage supporting the chuck, whereby the chucksupported by the stage is driven to allow the laser beam to beirradiated on the entire surface of the semiconductor substrate.
 18. Thesystem of claim 14, wherein the optical unit comprises: an attenuatorcontrolling an energy level of the laser beam outputted from the lasergenerating unit; a homogenizer regularizing an energy distribution ofthe laser beam; a lens array having a field lens and a doublet lenscontrolling the irradiated laser beam to have a regular beam profile;and a mirror changing a path of the laser beam to be irradiated on thesemiconductor substrate.
 19. The system of claim 14, wherein thetransferring unit comprises: the cassette having the plurality of slotsin which the semiconductor substrate are loaded; an aligner aligning thesemiconductor substrate loaded in the slots of the cassette; a coolingstage cooling the semiconductor substrate heated; and a transferringrobot transferring the loaded semiconductor substrate from the slots tothe chuck.
 20. The system of claim 14, wherein the photographing unit isprovided at the transferring unit.
 21. The system of claim 14, whereinthe laser generating unit generates the laser beam having an energylarger than an energy necessary for removing particles from thesemiconductor substrate.
 22. method for processing a semiconductorsubstrate using a laser beam, the method comprising: setting a processcontrol data for a slot in which the semiconductor substrate is loaded;detecting identification information of the slot, and controlling aprocess of the semiconductor substrate on the basis of the set controldata; and processing the semiconductor substrate on the basis of thecontrol data using the laser beam with a predetermined energy.
 23. Themethod of claim 22, wherein the controlling of the process comprises:detecting the identification information assigned to the slot; andcontrolling the process of the semiconductor substrate on the basis ofthe control data.
 24. The method of claim 22, wherein the detecting isperformed using an aligner aligning the semiconductor substratesrespectively loaded in the slots.
 25. A method for processing asemiconductor substrate using a laser beam, the method comprising:setting a process control data set for the semiconductor substrate;storing image data of each process of the semiconductor substrate;photographing the semiconductor substrate to output a photographedimage; comparing the outputted photographed image and the stored imagedata to decide the process of the semiconductor substrate; controllingthe process of the semiconductor substrate on the basis of the controldata corresponding to the decided process; and processing thesemiconductor substrate on the basis of the control data using the laserbeam with a predetermined energy.
 26. The method of claim 25, wherein inthe deciding of the process, a pattern formed on the semiconductorsubstrate is compared with a pattern of the stored image data on thebasis of the photographed image to decide the process of thesemiconductor substrate.
 27. The method of claim 25, wherein thephotographing is performed using the photographing unit of the aligneraligning the semiconductor substrates, which are loaded in a pluralityof slots provided at a cassette, or using the transferring unittransferring the semiconductor substrate.
 28. The method of claim 25,wherein the photographing further comprises converting a light, which isemitted from the semiconductor substrate, into a predeterminedelectrical signal.
 29. The method of claim 22 or 25, wherein the controldata has at least one of a control parameter, a scanning speed, arepetition rate, an attenuation angle of the laser beam, a kind of areactive gas, and an injection speed of the reactive gas, whichcorrespond to the process of the semiconductor substrate.
 30. The methodof claim 29, wherein the processing of the semiconductor substratecomprises a first process including at least one of etching,ion-implantation, planarization and deposition, and a second processincluding at least one of stripping, polishing, cleaning and annealing,which correspond to the first process.
 31. The method of claim 22 or 25,wherein the control data has at least one of the control parameter, thescanning speed, the repetition rate, the attenuation angle of the laserbeam, the kind of the reactive gas, and the injection speed of thereactive gas, which correspond to a kind of a device formed in thesemiconductor substrate or a kind of material constituting thesemiconductor substrate.
 32. The method of claim 31, wherein the deviceis at least one of a memory device, a non-memory device, a RF (RadioFrequency) device and a displaying device.
 33. The method of claim 22 or25, wherein the processing of the semiconductor substrate comprises:transferring the semiconductor substrate from the cassette in which thesemiconductor substrate is loaded, to a heating chuck; and transmittingthe generated laser beam from the laser generator to the semiconductorsubstrate.
 34. The method of claim 33, wherein the processing of thesemiconductor substrate further comprises preparing a vacuum atmosphereor a gas atmosphere to allow the loaded semiconductor substrates to beprocessed in the vacuum chamber.
 35. The method of claim 33, wherein theprocessing of the semiconductor substrate further comprises driving thevacuum chamber into which the semiconductor substrate is introduced, toallow the laser beam to be irradiated on an entire surface of thesemiconductor substrate.
 36. The method of claim 33, wherein theprocessing of the semiconductor substrate further comprises driving thechuck on which the semiconductor substrate is loaded, to allow the laserbeam to be irradiated on the entire surface of the semiconductorsubstrate.
 37. The method of claim 22 or 25, wherein the generated laserbeam has a larger energy than an energy necessary for removing particlesfrom the semiconductor substrate.